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A novel co-design and evaluation methodology for ESD protection in RFIC

机译:RFIC中用于ESD保护的新型协同设计和评估方法

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摘要

ESD design of RFIC is a great issue due to the lack of ESD device models and the interactions between ESD protection and core circuits of RFIC. In this paper, a novel co-design methodology incorporating device-level simulation of ESD device and RF circuit design is proposed. In this methodology, the ESD protection is incorporated into RFIC core circuit design by extracting S parameters and constructing table-lookup model of the ESD matching network. By comparing the RF performances with expected targets, the parameters of matching components and ESD device structures are rectified. In addition, the critical parameters of ESD protection are obtained by simulation. The RF-ESD design of a 5.25 GHz LNA is used to demonstrate the implementation of this novel approach.
机译:由于缺少ESD器件模型以及ESD保护与RFIC核心电路之间的相互作用,RFIC的ESD设计成为一个大问题。本文提出了一种新颖的协同设计方法,该方法结合了ESD器件的器件级仿真和RF电路设计。在这种方法中,通过提取S参数并构建ESD匹配网络的查表模型,将ESD保护集成到RFIC核心电路设计中。通过将RF性能与预期目标进行比较,可以校正匹配组件和ESD器件结构的参数。另外,通过仿真获得了ESD保护的关键参数。 5.25 GHz LNA的RF-ESD设计用于演示这种新颖方法的实现。

著录项

  • 来源
    《Microelectronics & Reliability》 |2012年第11期|p.2632-2639|共8页
  • 作者单位

    Key Laboratory for Wide Band Cap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory for Wide Band Cap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory for Wide Band Cap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;

    Key Laboratory for Wide Band Cap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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