Modeling of organic thin film field-effect transistors based on pentacene in saturation regime: Effect of light illumination

摘要

Thin film transistor based on pentacene was fabricated on a SiO_2/Si substrate by thermal evaporation method at room temperature. Electrical characteristics of the pentacene transistor subjected to a UV light excitation at a wavelength of 365 nm were analyzed. Using the variable range hopping model transport (VRH) we have reproduced the mobility of charge carriers under dark and under light illumination in saturation regime. We have presented a method (differential method) that we can extract electrical parameters of this transistor based on pentacene under dark and under light illumination from the first and the second numerical derivative of electrical measurement I_D(V_G). Finally, we have extracted the electrical parameters, conductance g_(ch) and the total resistance R_T, of organic TFTs from output characteristics I_D( V_D) using numerical fit under dark.