机译:高压功率MOSFET的端子环结构建模
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong,Canaan Semiconductor Limited, Hong Kong Science Park, Shatin, Hong Kong;
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
Canaan Semiconductor Limited, Hong Kong Science Park, Shatin, Hong Kong;
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong;
Department of Electronic Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong,University of Bucharest, Faculty of Physics, 405 Atomistilor Str., Bucharest-Magurele 077125, P.O. Box MC-11, Romania;
机译:平面6H-SiC ACCUFET:新型高压功率MOSFET结构
机译:器件结构对带有漏极扩展MOSFET的高压40V CMOS工艺中闩锁抗扰度的依赖性
机译:器件结构对带有漏极扩展MOSFET的高压40V CMOS工艺中闩锁抗扰度的依赖性
机译:垂直高压GaN功率MOSFET的性能预测以及与4H-SiC功率MOSFET的比较
机译:用于高压碳化硅电源MOSFET的门控方法
机译:用于高频脉冲回波仪表的高压功率放大器的功率MOSFET线性化器
机译:高压SiC电源MOSFET中单事件烧坏的离子诱导能量脉冲机制及结屏障肖特基二极管
机译:高压功率mOsFET中的灾难性sEE