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首页> 外文期刊>Microelectronics & Reliability >The performance and fracture mechanism of solder joints under mechanical reliability test
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The performance and fracture mechanism of solder joints under mechanical reliability test

机译:机械可靠性试验下焊点的性能和断裂机理

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摘要

The drop resistance and fracture behavior of Sn-37Pb, Sn-3.0Ag-0.5Cu (SAC305), Sn-1.0Ag-0.5Cu (SAC105), and Sn-8.5Zn-0.5Ag-0.01Al-0.1 Ga (SnZn-5e) solder ball joints under the board-level drop test (BLDT) and the ball impact test (BIT) were studied. The results show that the drop reliabilities in terms of the characteristic life ratio from the Weibul plot are SnZn-5e : Sn-37Pb:SAC105:SAC305 = 3.1:2.9:2.1:1. It was observed that failure of Sn-37Pb occurred at the eutectic tin-lead phase whereas it took place at the brittle interface between the (Cu,Ni)_6Sn_5 inter-metallic compound and Ni layer in SAC305. The failure of SAC105 was found to be located within the solder matrix as well as at the interface of the inter-metallic compound. The failure of SnZn-5e depends on the morphology of the interfacial inter-metallic compound. The failure modes of Sn-37Pb and SAC305 after the BIT were similar to those after the BLDT. The maximum impact force (F_(max)) and the initial fracture energy (E) from the BIT can be used to evaluate the drop reliability of solder joints.
机译:Sn-37Pb,Sn-3.0Ag-0.5Cu(SAC305),Sn-1.0Ag-0.5Cu(SAC105)和Sn-8.5Zn-0.5Ag-0.01Al-0.1 Ga(SnZn- 5e)研究了在板级跌落试验(BLDT)和球冲击试验(BIT)下的焊球接头。结果表明,根据威布尔图,以特征寿命比表示的跌落可靠性为SnZn-5e:Sn-37Pb:SAC105:SAC305 = 3.1:2.9:2.1:1。在SAC305中,观察到Sn-37Pb的破坏发生在共晶锡-铅相上,而发生在(Cu,Ni)_6Sn_5金属间化合物与Ni层之间的脆性界面上。发现SAC105的失效位于焊料基体内以及金属间化合物的界面。 SnZn-5e的失效取决于界面金属间化合物的形态。 BIT后Sn-37Pb和SAC305的失效模式与BLDT后相似。 BIT的最大冲击力(F_(max))和初始断裂能(E)可用于评估焊点的跌落可靠性。

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  • 来源
    《Microelectronics & Reliability 》 |2012年第7期| p.1428-1434| 共7页
  • 作者单位

    Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC;

    Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC;

    Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC;

    Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan, ROC;

    Central Labs, Advanced Semiconductor Engineering, Inc., Kaohsiung 81170, Taiwan, ROC;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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