机译:GaN基台面和平面型异质结构场效应晶体管中的栅极泄漏电流
Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava, Slovakia;
Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava, Slovakia;
Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava, Slovakia;
Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava, Slovakia;
Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia;
Alcatel-Thales Ⅲ-V Lab, Route de Nozay, 91460 Marcoussis, France;
机译:具有Al_2O_3 / Si_3N_4栅极绝缘体的沟道掺杂AlGaN / GaN异质结构场效应晶体管中的高漏极电流密度和降低的栅极泄漏电流
机译:超薄Al_2O_3 / Si_3N_4双层AlGaN / GaN绝缘栅异质结构场效应晶体管中栅电流泄漏优异抑制效果的机理
机译:AI_2O_3 / Si_3N_4双层AIGaN / GaN绝缘栅异质结构场效应晶体管中栅极电流泄漏的优异抑制
机译:亚型AlAs隔离层对InAlAs / InGaAs异质结构场效应晶体管栅极漏电流的影响
机译:绝缘亚微米栅极III-N异质结构场效应晶体管的射频特性。
机译:自对准栅AlGaN / GaN异质结构场效应晶体管的氮化钛的合成
机译:Inalas / InGaas异质结构场效应晶体管中的台面 - 侧壁漏电