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Effects of single vacancy defect position on the stability of carbon nanotubes

机译:单空位缺陷位置对碳纳米管稳定性的影响

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摘要

In this paper, the buckling behavior of fixed-fixed, both single- and multi- wall carbon nanotubes (CNTs) under axial compressive loads, are studied using analytical continuum theory and molecular dynamics (MD). An approach based on the tethering of atoms (applying a spring force), is used to apply the boundary conditions and extract the reaction forces during the MD simulation. The effects of the vacancy defect position on the CNT critical buckling load are studied at room temperature and at low temperature (1 K). It is concluded that the defects at the ends of the CNT and close to the middle of the CNT significantly reduce the critical buckling load and strain of CNTs at 1 K. At room temperature the influence of vacancy defects on the critical buckling load and strain appears to be small. The MD simulation results can prove to be useful for developing more accurate continuum descriptions of the CNT mechanics in future research.
机译:在本文中,使用分析连续性理论和分子动力学(MD)研究了固定固定的单壁和多壁碳纳米管(CNT)在轴向压缩载荷下的屈曲行为。使用基于原子束缚的方法(施加弹簧力)来施加边界条件并提取MD模拟过程中的反作用力。在室温和低温(1 K)下研究了空位缺陷位置对CNT临界屈曲载荷的影响。结论是,在CNT的末端和靠近CNT的中间的缺陷大大降低了CNT在1 K时的临界屈曲载荷和应变。在室温下,空位缺陷对临界屈曲载荷和应变的影响出现了。很小。 MD仿真结果可以证明对于在将来的研究中开发更准确的CNT力学连续描述是有用的。

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  • 来源
    《Microelectronics & Reliability 》 |2012年第7期| p.1279-1284| 共6页
  • 作者单位

    Department of Microelectronics, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands;

    Department of Microelectronics, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands;

    Department of Microelectronics, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands;

    Department of Microelectronics, Delft University of Technology, Feldmannweg 17, 2628 CT Delft, The Netherlands Philips Lighting, Mathildelaan 1, 5617 BD Eindhoven, The Netherlands;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
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