机译:常关AlGaN / GaN HFET短路时的热不稳定性
Department of Electric and Information Engineering (DIEI), University of Cassino and Southern Lazio, Via C. Di Biasio, 43, 03043 Cassino, FR, Italy;
Department of Electric and Information Engineering (DIEI), University of Cassino and Southern Lazio, Via C. Di Biasio, 43, 03043 Cassino, FR, Italy;
Department of Electric and Information Engineering (DIEI), University of Cassino and Southern Lazio, Via C. Di Biasio, 43, 03043 Cassino, FR, Italy;
机译:AlGaN / GaN HFET的小信号等效电路建模:确定AlGaN / GaN HFET电路元件的混合提取方法
机译:具有等离子体增强原子层沉积的AIO_xN_y栅极绝缘体的常关型凹栅AlGaN / GaN MOS-HFET
机译:具有等离子体增强原子层沉积的AiO_xn_y栅极绝缘体,常关凹槽AlGaN / GaN MOS-HFET
机译:我们在Si底物上报告了常常数-FaN基的异质结场效应晶体管(HFET)。使用金属化学气相沉积(MOCVD)生长AlGaN / AIN / GaN异质结构。用于常关操作的HFET W.
机译:基于物理的AlGaN / GaN HFET紧凑模型,可在电路模拟器中实现。
机译:用多指架构调制对高功率应用的自终止蚀刻技术常关P-GAN / ALGAN / GAN HEMT的研究
机译:微波大信号条件下AlGaN / GaN功率HFET的直接晶片上无创热监测
机译:m面alGaN / GaN和alInN / GaN异质结构的外延生长适用于常驻型GaN基板上的常关模式高功率场效应晶体管