XEBIC at the Dual Beam

摘要

After its golden age during the decades of the development of Silicon IC technology, nowadays Electron Beam Induced Current (EBIC) technique comes back to importance mostly on photonic and high speed electron devices based on compound semiconductors. A new approach for recording a fast EBIC embedded in a Dual Beam system is presented. The combined use of multi-slicing FIB, SEM and EBIC enables 3D tomography of P-N junctions and drives TEM preparation in failure analysis studies of leaky junctions.