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BTI and HCI first-order aging estimation for early use in standard cell technology mapping

机译:BTI和HCI一阶老化估计,可在标准单元技术映射中尽早使用

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摘要

The performance degradation in digital integrated circuit (IC) caused by BTI and HCI aging effects has increased significantly at each new technology node, as well as their importance in terms of circuit reliability throughout the entire circuit lifetime. This work proposes an aging design cost estimation method to be exploited in standard cell IC design flow. This method must be simple and fast, although not so accurate, to be suitable for the intense interactive process during the technology mapping in the logic synthesis phase. The proposed aging cost has been verified and validated through SPICE simulations carried out over a large number of CMOS gates.
机译:在每个新技术节点上,由BTI和HCI老化效应引起的数字集成电路(IC)的性能下降以及在整个电路寿命中它们在电路可靠性方面的重要性都大大增加了。这项工作提出了一种老化设计成本估算方法,该方法将在标准单元IC设计流程中加以利用。该方法必须简单,快速(尽管不够精确),才能适合逻辑综合阶段中技术映射期间的密集交互过程。拟议的老化成本已经通过在大量CMOS门上执行的SPICE仿真得到了验证和确认。

著录项

  • 来源
    《Microelectronics & Reliability》 |2013年第11期|1360-1364|共5页
  • 作者单位

    Center for Computational Science, Federal University of Rio Grande, Rio Grande, Brazil;

    Institute of Informatics, Federal University of Rio Grande do Sul, Porto Alegre, Brazil;

    Institute of Informatics, Federal University of Rio Grande do Sul, Porto Alegre, Brazil;

    Institute of Informatics, Federal University of Rio Grande do Sul, Porto Alegre, Brazil;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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