Thermal and electrical investigation of the reverse bias degradation of silicon solar cells

摘要

This work presents a detailed analysis of the degradation of Si-based solar cells submitted to reverse-bias stress; the study is based on electrical, electro-optical and thermal measurements, carried out at the different stages of the stress tests. The results show that exposure to reverse bias may induce severe modifications of the cell electro-optical performance: the most relevant failure mechanism is the increase in localized shunt resistance components. The changes in the leakage paths have been investigated both through infrared thermal imaging and SEM measurements.