Degradation of thermal interface materials for high-temperature power electronics applications

摘要

The specific thermal resistance values of several thermal interface materials (TlMs) intended to thermally enhance Cu contact pairs and their degradation, under isothermal ageing at 170 ℃ have been investigated using Cu stack samples consisting of 10 Cu discs and 9 layers of the TIMs. The results obtained indicate that the specific thermal resistance values of the as-prepared Cu stack samples, one with conductive Ag thermal grease, one with Sn-3.5Ag solder joints and one with 25 urn thick Sn foil as TIMs are significantly lower than those of the Cu stack sample without any TIM. However, after the isothermal ageing at 170℃ for 90 days, the specific thermal resistance values of the samples with these TIMs are not substantially different from those of the sample without any TIM. Also reported in this paper is an estimation of testing errors for the specific thermal resistance values, microstructure characterization of the aged samples and effect of the degradation of these TIMs on the thermal performance of a high-temperature half bridge power switch module.