机译:低栅界面使用晶格匹配ZrZnO透明栅设计捕获AlGaN / GaN HEMT
Dept. of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;
Dept. of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;
Dept. of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;
Dept. of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;
Dept. of Electronics Engineering, Chang Gung University, Taoyuan, Taiwan, ROC;
Dept. of Electronics Engineering. Feng Chia University, Taichung, Taiwan, ROC;
Materials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan, Taiwan, ROC;
Materials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan, Taiwan, ROC;
Materials and Electro-Optics Research Division, Chung Shan Institute of Science and Technology, Taoyuan, Taiwan, ROC;
机译:透明NiO门控AlGaN / GaN异质结构场效应晶体管中的快速和慢速界面陷阱
机译:透明AZO门控AlGaN / GaN HEMT的光响应和陷阱特性
机译:具有原位Si_3N_4 / Al_2O_3双层栅极电介质的AlGaN / GaN MIS-HEMT上正栅极偏置后的缓慢去陷阱现象分析
机译:GaN格子匹配ZnO / PR_2O_3薄膜作为AlGaN / GaN Hemt的栅极介电氧化物层
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:面向增强模式特性的具有双AlGaN势垒设计的嵌入式栅AlGaN / GaN MIS-HEMT研究
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明