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Low cost soft error hardened latch designs for nano-scale CMOS technology in presence of process variation

机译:在工艺变化的情况下,针对纳米级CMOS技术的低成本软错误硬化锁存器设计

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摘要

In this paper, two Low cost and Soft Error Hardened latches (referred to as LSEH1 and LSEH2) are proposed and evaluated. The proposed latches are fully SEU immune, i.e. they are capable of tolerating all particle strikes to any of their nodes. Moreover, they can mask Single Event Transients (SETs) occurring in combinational logics and reaching the input of the latches. We have compared our SEU/SET-tolerant latches with some well-known previously proposed soft error tolerant latches. To evaluate the proposed latches, we have done a set of SPICE simulations. The simulation results trough comparisons with other hardened latches reveal that the proposed latches not only have more robustness but also they have the advantage of lower cost in terms of power, area, and delay. Moreover, since process and temperature variations have a considerable effect on today's VLSI circuits, we have precisely investigated the effect of process variations such as threshold voltage and W/L variations on the delay and power consumption of our proposed latches.
机译:本文提出并评估了两个低成本和软错误强化锁存器(分别称为LSEH1和LSEH2)。提出的锁存器完全不受SEU的影响,即它们能够容忍所有粒子撞击到其任何节​​点。而且,它们可以掩盖发生在组合逻辑中并到达锁存器输入的单事件瞬变(SET)。我们已经将我们的SEU / SET容忍锁存器与一些众所周知的先前提出的软容错锁存器进行了比较。为了评估建议的锁存器,我们完成了一组SPICE仿真。通过与其他硬化锁存器的比较,仿真结果表明,所提出的锁存器不仅具有更高的鲁棒性,而且在功耗,面积和延迟方面均具有成本更低的优势。此外,由于工艺和温度变化对当今的VLSI电路有相当大的影响,因此我们已经精确地研究了工艺变化(例如阈值电压和W / L变化)对我们提出的锁存器的延迟和功耗的影响。

著录项

  • 来源
    《Microelectronics & Reliability》 |2013年第6期|912-924|共13页
  • 作者单位

    Department of Electrical Engineering, Sharif University of Technology, Iran;

    Department of Electrical Engineering, Sharif University of Technology, Iran;

    Department of Computer Engineering, Iran University of Science and Technology, Iran;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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