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机译:一种计算石墨烯纳米带场效应晶体管中有效沟道长度的分析方法
School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia;
Department of Computer Engineering. Ashtian Branch, IAU, Ashtian, Iran;
Institute of Advanced Photonics Science, Nanotechnology Research Alliance, Universiti Teknologi Malaysia, 81310 Johor Bahru, Malaysia;
School of Electrical and Electronic Engineering, Engineering Campus, Universiti Sains Malaysia, Penang, Malaysia;
Japan International Institute of Technology (MJIIT), Universiti Teknologi Malaysia, 54100 Kuala Lumpur, Malaysia;
Lancaster Quantum Technology Center, Physics Department, Lancaster University, LAI 4YB Lancaster, UK;
received 12 september 2012; received in revised form 23 november 2012; accepted 3 december 2012; available online 14 february 2013;
机译:栅介电材料对不同沟道长度的弹道肖特基势垒石墨烯纳米带场效应晶体管和碳纳米管场效应晶体管电流-电压特性的依赖性
机译:研究石墨烯纳米带场效应晶体管击穿机理的分析方法
机译:使用Dirac样式和Schr?Dinger等式计算石墨烯纳米隧道隧道场效应晶体管中隧道电流的比较
机译:高宽度石墨烯纳米带场效应晶体管中电流的解析模型
机译:二维石墨烯和石墨烯纳米带场效应晶体管。
机译:单轴应变对双栅石墨烯纳米带场效应晶体管性能影响的分析模型
机译:单轴应变对双栅石墨烯纳米带场效应晶体管性能影响的分析模型