Characteristics of random telegraph signal noise in time delay integration CMOS image sensor

摘要

A statistical model based on large sample simulation is established to study the relationship between random telegraph signal (RTS) noise and the number of time delay integration (TDI) stages in TDI CMOS image sensor (CIS). Matlab simulation results show that the mean value of RTS noise increases by a factor greater than M~0.5 when the number of TDI stages is M, and the factor approximates to M~0.5 with larger TDI stages. In noise histogram, RTS noise exhibits Gaussian distribution when the number of TDI stages is more than a special value. These results serve as a guideline for the design of TDI stages and the analysis of noise.