Engineering buried oxide in dopant-segregated Schottky barrier SOI MOSFET for nanoscale CMOS circuits

摘要

In this paper CMOS logic circuit performance of dopant-segregated Schottky barrier (DSSB) SOI and 5-doped partially insulated DSSB SOI (DSSB Pi-OX-5) MOSFETs has been explored by extensive mixed-mode device/circuit simulations. It has been found that, the presence of partial buried oxide and 8-doping in an n-channel and p-channel DSSB Pi-OX-8 MOSFETs not only suppresses the off-state leakage, short-channel effects, self-heating effect and the process induced threshold voltage variability but also improves the on-state drive current of the devices. Further, although switching energy in the CMOS inverter, NAND and NOR gates based on DSSB SOI and DSSB Pi-OX-8 MOSFETs is almost equal, static power dissipation and propagation delay in the logic gates based on DSSB Pi-OX-8 MOSFET are reduced by ～75% and ～20% respectively over the logic gates based on DSSB SOI device. Thus, employing partial buried oxide and 8-doping under the channel of DSSB SOI MOSFET not only eliminates the potential weaknesses of this device but also makes it a suitable candidate for nanoscale CMOS logic circuits.