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Analysis and mitigation of BTI aging in register file: An application driven approach

机译:寄存器文件中BTI老化的分析和缓解:一种应用程序驱动的方法

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摘要

Analysis and tackling of time-dependent aging wearout effects are important design objectives in microprocessor designs. Application induced stress, combined with circuit-architectural design styles creates widely diverging wearout characteristics in a processor datapath. Moreover, in a typical case in desktop computing, different applications can interleave. This interleaving can cause destructive interference in stress patterns leading to substantially worse aging effect than an isolated application. We investigate NBTI and PBTI wearout degradation in a register file using a comprehensive circuit-architectural analysis of SRAM cells, and show that recently proposed periodic bit inversion is unable to cope with interleaving application induced stress. We propose two novel micro-architecture techniques to mitigate this limitation. Our techniques reduce the Static Noise Margin (SNM) by 3.6×, while improving the degradation uncertainty by 14x over current state-of-the-art techniques. Our overhead analysis shows that both area and power overheads of our proposed technique can be minimal in the context of the reliability improvement it provides.
机译:时间相关的老化损耗影响的分析和解决是微处理器设计中的重要设计目标。应用程序引起的压力与电路架构设计风格相结合,在处理器数据路径中产生了广泛不同的磨损特性。而且,在台式机计算的典型情况下,不同的应用程序可以交错。这种交织会在应力模式中造成破坏性干扰,从而导致老化效果比隔离应用程序差得多。我们使用SRAM单元的全面电路架构分析研究寄存器文件中的NBTI和PBTI磨损降低,并表明最近提出的周期性位反转无法应付交错的应用程序诱发的压力。我们提出了两种新颖的微体系结构技术来减轻这种限制。我们的技术将静态噪声余量(SNM)降低了3.6倍,同时将降级不确定性提高了14倍(当前的最新技术)。我们的开销分析表明,在所提供的可靠性提高的背景下,我们提出的技术的面积和功耗开销都可以最小化。

著录项

  • 来源
    《Microelectronics & Reliability》 |2013年第1期|105-113|共9页
  • 作者单位

    Electrical and Computer Engineering, Utah State University, United States;

    Electrical and Computer Engineering, Utah State University, United States;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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