Defects evolution involving interface dispersion approaches in high-k/metal-gate deep-submicron CMOS

摘要

The paper proposes a technique to demonstrate energy evolution of amorphous oxides defects from the interface depth dispersion using fast ramp laser spike annealing to achieve super activation, in order to significantly assess their impacts on devices with high-k metal gate by numerical analysis. Recovery of trapped charges in HK/MG technologies is intensively studied and provides its capability for highlighting different positively charged defects within and beyond the silicon band gap. The defects vary significantly with energy level as well as in evolution of the E centers and the interface states densities. The defects in e' centers below Fermi energy level are neutral and unstable, which significantly increase above thermal equilibrium during stressing and driven from valence band to above conduction band energy in fast recovery stage. A correlation of the time dependency for the charged trap concentration, interfacial density and the drain current is observed with current degradation due to the trap accumulation. The analysis shows a strong sensitivity to positive bias activation of the dopant thus been considered for the evaluation of the device performance.