Hot carrier and PBTI induced degradation in silicon nanowire gate-all-around SONOS MOSFETs

摘要

Hot carrier and PBTI induced device degradation in nanowire gate-all-around SONOS MOSFETs with a height of 10 nm have been investigated with different widths and stress temperatures. The experimental data show that PBTI and hot carrier degradation are more significant in narrow devices than in wide devices. The possible degradation mechanisms for more significant hot carrier effects in narrow devices and at high stress temperatures are discussed. From the comparison of hot carrier and PBTI degradation as a function of widths, the dominant component for the drain current degradation has been discussed.