Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses

摘要

Spin transfer torque magnetic tunnel junction (STT MTJ) is considered as a promising candidate for non-volatile memories thanks to its low power, high speed and easy integration with CMOS process. However, it has been demonstrated intrinsically stochastic. This phenomenon leads to the frequent occurrence of switching errors, which results in considerable reliability issues of hybrid CMOS/MTJ circuits. This paper proposes a compact model of MTJ with STT stochastic behavior, in which technical variations and temperature evaluation are properly integrated. Moreover, the phenomenon of dielectric breakdown of MgO barrier which determines the lifetime of MTJ is also taken into consideration. Its accurate performances allow a more realistic reliability analysis involving the influences of ambient environment and technical process.