Voltage scaling and aging effects on soft error rate in SRAM-based FPGAs

摘要

This work investigates the effects of aging and voltage scaling in neutron-induced bit-flip in SRAM-based Field Programmable Gate Array (FPGA). Experimental results show that aging and voltage scaling can increase in at least two times the susceptibility of SRAM-based FPGAs to Soft Error Rate (SER). These results are innovative, because they combine three real effects that occur in programmable circuits operating at ground-level applications. In addition, a model at electrical level for aging, soft error and different voltages in SRAM memory cells was described to investigate by simulation in more details the effects observed at the practical neutron irradiation experiment. Results can guide designers to predict soft error effects during the lifetime of devices operating in different power supply mode.