Total ionizing dose response of fluorine implanted Silicon-On-Insulator buried oxide

摘要

A comparison is made of the behavior of silicon on insulator buried oxides and wet thermal oxides before and after fluorine implantation and irradiation. Before irradiation, the electrical characteristics of the thermal oxide and buried oxide are significantly different. The fluorine implantation in the smart-cut* buried oxide results in a large negative threshold shift due to the trapping of positive charges. These charges are associated with positively charged fluorine ions on implantation and are trapped at preexisting trap sites, particularly at the bonding interface, and at additional defects caused by the ion implantation damage. This shift is absent in the wet thermal oxide. After Co~(60) irradiation up to 500 Krad(Si), the negative flatband and threshold voltage shift in the fluorine implanted buried oxide is larger than in the unimplanted buried oxide indicating that any potential positive effect of fluorine on the passivation of interface states is more than offset by the additional trapping sites created during implantation. These results demonstrate that in the design of a transistor utmost care must be taken to prevent any fluorine being implanted into the buried oxide.