Exact 3D simulation of Scanning Electron Microscopy images of semiconductor devices in the presence of electric and magnetic fields

摘要

Simulations of Scanning Electron Microscopy images of semiconductor devices in the presence of electric fields are usually too simplistic, since they just rely on approximated solutions of the Poisson equation. In this paper, the 3D Poisson equation is solved in a TCAD environment, which accounts for realistic boundary conditions, as well as for complex physical effects like the formation of space charge regions in semiconductors and the polarization of dielectrics. The calculated solution is then passed to a Monte Carlo code that implements a new electron tracking engine optimized for speed, stability, and accuracy. After introducing the new tracking engine, three simulation examples are presented dealing with the presence of an extraction field, self-charging of the irradiated sample, and potential contrast in a biased silicon junction.