机译:有机和混合6-T SRAM单元的噪声容限,写入能力和读取稳定性的设计和分析
Department of Polymer and Process Engineering, Indian Institute of Technology, Roorkee 247667, India,Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India,Department of Electronics and Communication Engineering, Graphic Era University, Dehradun 248001, India;
Department of Electronics and Communication Engineering, Indian Institute of Technology, Roorkee 247667, India;
Department of Polymer and Process Engineering, Indian Institute of Technology, Roorkee 247667, India;
All-p organic SRAM; Hybrid SRAM; Noise margin; Organic complementary SRAM; Read stability; Write access time;
机译:FinFET SRAM单元的读取稳定性和可写入性分析
机译:用于纳米技术的SRAM单元的读取稳定性和写入能力分析
机译:用于纳米技术的SRAM单元的读取稳定性和写入能力分析
机译:SRAM阵列的单个单元的双Vt配置的读取稳定性和写入能力分析-工艺引起的管芯内Vt变化的影响
机译:用于软盘介质读/写头设计动态分析的有限元建模和实验技术的发展。
机译:功耗优化的变化感知双阈值SRAM单元设计技术
机译:纳米技术的SRAM单元的读取稳定性和可写性分析