机译:高功率直流应力下GaN HEMT中漏极电流退化的激活能
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, United States;
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, United States;
Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA 02139, United States;
GaN HEMT; Arrhenius; Activation energy; Degradation;
机译:利用栅极-漏极和栅极-源极的反向偏置应力对GaN HEMT进行实验和模拟的dc退化
机译:逆向静电放电应力下P-GAN栅极E模式GAN HEMT的降解行为及机制
机译:未钝化GaN / AlGaN / GaN / SiC HEMT的低电流色散和低偏置应力退化
机译:GaN HEMT的RF降解及其与DC应力和I-DLTS测量的关系
机译:高功率电子设备的建模与鉴定:闪光沸腾和GAN HEMT可靠性造型激光二极管的系统分析
机译:具有高栅极和多凹槽缓冲器的新型高能效AlGaN / GaN HEMT
机译:高功率电应力下Inaln / GaN Hemts的异常源侧劣化