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首页> 外文期刊>Microelectronics & Reliability >Fault-tolerant TMR and DMR circuits with latchup protection switches
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Fault-tolerant TMR and DMR circuits with latchup protection switches

机译:具有闭锁保护开关的容错TMR和DMR电路

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摘要

The paper presents CMOS ASICs which can tolerate the single event upsets (SEUs), the single event transients (SET), and the single event latchup (SEL). Triple and double modular redundant (TMR and DMR) circuits in combination with SEL protection switches (SPS) make the base of the proposed approach. The SPS had been designed, characterized, and verified before it became a standard library cell. A few additional steps during logic synthesis and layout generation have been introduced in order to implement the redundant net-lists and power domains as well as to place the latchup protection switches. The approach and accompanying techniques have been verified on the example of a shift-register and a middleware switch processor.
机译:本文提出了CMOS ASIC,它们可以容忍单个事件扰动(SEU),单个事件瞬变(SET)和单个事件锁存(SEL)。三重和双重模块化冗余(TMR和DMR)电路与SEL保护开关(SPS)相结合,构成了该方法的基础。在成为标准库单元之前,已经对SPS进行了设计,表征和验证。为了实现冗余网表和电源域以及放置闩锁保护开关,已经引入了逻辑综合和布局生成过程中的一些其他步骤。该方法和相关技术已在移位寄存器和中间件交换处理器的示例中得到验证。

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