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机译:p通道Underlap DG FinFET中的闪烁和热噪声分析
Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata 700 032, India;
Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata 700 032, India;
Silicon Institute of Technology, Patia Hills, Bhubaneswar 751024, India;
Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata 700 032, India;
Nano Device Simulation Laboratory, Electronics and Telecommunication Engineering Department, Jadavpur University, Kolkata 700 032, India;
Ultrathin body; p-Channel; Underlap DG FinFET; Virtual source; Flicker noise; Thermal noise;
机译:弱反转区域中n沟道叠底DG FinFET的闪烁和热噪声
机译:N通道DG Finfets中的闪烁和热噪声的解析模型
机译:p通道DG-FinFET的噪声建模
机译:体FinFET的Fin宽度和闪烁噪声的温度依赖性分析
机译:10纳米以下鳍片的不对称重叠优化,可实现节能逻辑和强大的存储器。
机译:基于射频/模拟电路的非对称漏极扩展Dual-kk Trigate叠底FinFET
机译:使用低温噪声光谱法鉴定p沟道SOI FinFET中的Si膜陷阱