Experimental and numerical approach on junction temperature of high-power LED

摘要

The understanding of thermal resistance and junction temperature is important in the area of designing efficient, long-lasting high-power Light Emitting Diodes (LEDs) and diode stacks. This paper developed a systematic evaluating program for investigating the effect of location and thickness on the thermal resistance and junction temperature of LED on an aluminum substrate. Structure function measurements were implemented by Thermal Transient Tester (T3ster) and Integrating Sphere on LED placed on an aluminum plate. The temperature distribution of LED was analyzed to understand the relationship between thermal resistance and location of the LED on the aluminum base. Meantime, to evaluate the validity of the test, the simulation is developed by considering structure properties. The simulation curve basically has a similarity with the experimental curve in the overall. It implies that the evaluating method can provide guidance in understanding thermal reliability of LED lamps and designing thermal management techniques.