A reversible first-order dispersive model of parametric instability

摘要

A general purpose instability model is derived for the variation of device parameters which is related to the activation-deactivation of statistically independent microscopic defects, with reversible first-order reaction kinetics and distributed rate constants. The model is aimed at predicting the parametric instability of electronic devices under periodic AC stimulus of arbitrary waveform over a wide time-scale range covering the whole device lifetime. As a practical application, we extracted a model for the negative-bias temperature instability of a p-channel type silicon MOSFET, including both the recovery effects and the voltage-temperature dependence. The model can be implemented in commercially available tools Tor the compact simulation of integrated circuits.