Quantum coupling effects on charging dynamics of nanocrystalline memory devices

摘要

A model is proposed to account for the impacts of the quantum coupling between the longitudinal and transverse components of the channel electron motion on the charging dynamics of memory devices. The calculations demonstrate that the quantum coupling effects on the charging dynamics of Ge NC (germanium nanocrystalline) memory devices cannot be neglected for high temperature and drift velocity of the channel electrons higher than the thermal velocity. The calculations also show that the charging current of Ge NC memory devices strongly depends on the temperature, drift velocity and effective electron mass of the tunneling oxide layer. The reduction in the barrier height caused by the quantum coupling is its origin. The sensitivity of the effective electron mass of the tunneling oxide layer on the charging current of Ge NC memory devices is a potential method to improve the performance of device.