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Reliability assessment of CMOS differential cross-coupled LC oscillators and a novel on chip self-healing approach against aging phenomena

机译:CMOS差分交叉耦合LC振荡器的可靠性评估和针对老化现象的新型芯片自愈方法

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摘要

In this paper, reliability of CMOS differential cross-coupled LC oscillators is examined, and a novel on chip aging detection and healing technique is developed to increase the lifetime of oscillator circuits. Aging causes degradation in several transistor parameters, such as threshold voltage, mobility, and transcon-ductance. While these changes cause irregular timing characteristics and increased power consumption in digital circuits, the case is quite different for their analog counterparts. Analog circuits, especially nonlinear ones, show more deviations at the output due to parameter changes. In order to evaluate the aging effects on nonlinear analog circuits, two different oscillator structures (n-type and p-type) with 5 GHz oscillation frequency were designed using 0.13 μm technology. The phase noise analysis of fresh and aged oscillators was performed analytically and through simulations. Based on these analyses the robustness of oscillators was discussed. Finally, an on chip aging sensor and self recovery mechanism are proposed to increase the robustness of the CMOS LC oscillators.
机译:本文研究了CMOS差分交叉耦合LC振荡器的可靠性,并开发了一种新颖的芯片老化检测和修复技术来延长振荡器电路的寿命。老化会导致一些晶体管参数的劣化,例如阈值电压,迁移率和跨导。尽管这些变化会导致不规则的时序特性并增加数字电路的功耗,但模拟副本的情况却大不相同。由于参数变化,模拟电路(尤其是非线性电路)在输出端显示出更多偏差。为了评估老化对非线性模拟电路的影响,使用0.13μm技术设计了两种具有5 GHz振荡频率的不同振荡器结构(n型和p型)。对新鲜和老化振荡器的相位噪声分析是通过分析和模拟进行的。基于这些分析,讨论了振荡器的鲁棒性。最后,提出了一种片上老化传感器和自恢复机制,以提高CMOS LC振荡器的鲁棒性。

著录项

  • 来源
    《Microelectronics & Reliability》 |2014年第2期|397-403|共7页
  • 作者单位

    Bogazici University, Department of Electrical and Electronics Engineering, North Campus, Square Building, Bebek, Istanbul 34342, Turkey;

    Bogazici University, Department of Electrical and Electronics Engineering, North Campus, Square Building, Bebek, Istanbul 34342, Turkey;

    Bogazici University, Department of Electrical and Electronics Engineering, North Campus, Square Building, Bebek, Istanbul 34342, Turkey;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
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