机译:CMOS差分交叉耦合LC振荡器的可靠性评估和针对老化现象的新型芯片自愈方法
Bogazici University, Department of Electrical and Electronics Engineering, North Campus, Square Building, Bebek, Istanbul 34342, Turkey;
Bogazici University, Department of Electrical and Electronics Engineering, North Campus, Square Building, Bebek, Istanbul 34342, Turkey;
Bogazici University, Department of Electrical and Electronics Engineering, North Campus, Square Building, Bebek, Istanbul 34342, Turkey;
机译:基于多目标优化的差分交叉耦合CMOS LC振荡器综合分析
机译:通过多目标优化差分交叉耦合CMOS LC振荡器的综合分析
机译:28 nm CMOS LC振荡器差分拓扑中的相位噪声分析:Armstrong,Colpitts,Hartley和共源交叉耦合对
机译:130 nm CMOS差分交叉耦合5 GHz LC振荡器的设计
机译:低压低相位噪声高频CMOS LC压控振荡器的新架构。
机译:28 nm CMOS LC振荡器电路拓扑中的相位噪声的比较分析:HartleyColpitts和共源交叉耦合差分对
机译:28 nm CMOS LC振荡器差分拓扑中相位噪声分析:Armstrong,Colpitts,Hartley和共源交叉耦合对