Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests

摘要

This paper investigates the effects of hot carrier injection on the switching performance of power RF LDMOS (Radio Frequency Lateral Diffused Metal-Oxide-Semiconductor) devices. In addition, their influences on the dynamic parameters are studied after various accelerated aging tests (thermal and electrical). The response of these parameters and the switching waveform are described. The findings of experimental results are presented and discussed. Measurements show that important variations are obtained on the devices' rise time. After aging tests, the charge trapping in the gate oxide causes the modifications in the Miller capacity level and width resulting in an increase of the rise time and a decrease in the fall time, consequently increasing of the switching losses. (C) 2015 Elsevier Ltd. All rights reserved.