Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes

著录项

• 来源
  《Microelectronics & Reliability》 |2015年第10期|1741-1745|共5页
• 作者

  Del Vecchio P.; Curutchet A.; Deshayes Y.; Bettiati M.; Laruelle F.; Labat N.; Bechou L.;

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• 作者单位

  Univ Bordeaux, IMS Lab, CNRS, INP,UMR 5218, F-33405 Talence, France;

  Univ Bordeaux, IMS Lab, CNRS, INP,UMR 5218, F-33405 Talence, France;

  Univ Bordeaux, IMS Lab, CNRS, INP,UMR 5218, F-33405 Talence, France;

  3SP Technol SAS, F-91625 Nozay, France;

  3SP Technol SAS, F-91625 Nozay, France;

  Univ Bordeaux, IMS Lab, CNRS, INP,UMR 5218, F-33405 Talence, France;

  Univ Bordeaux, IMS Lab, CNRS, INP,UMR 5218, F-33405 Talence, France;

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• 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  Laser diodes; Reliability; Low-frequency noise; Microplasma; Semiconductor;

  机译：激光二极管可靠性低频噪声微等离子体半导体;