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机译:高速SiGe:C HBT在接近SOA极限的电应力下的可靠性
Univ Bordeaux, IMS Lab, CNRS, UMR 5218, F-33405 Talence, France|Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy;
Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy;
Indian Inst Technol, Dept Elect Engn, Madras 600036, Tamil Nadu, India;
Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy;
Infineon Technol AG, Neubiberg, Germany;
Univ Bordeaux, IMS Lab, CNRS, UMR 5218, F-33405 Talence, France;
Univ Naples Federico II, Dept Elect Engn & Informat Technol, Naples, Italy;
Univ Bordeaux, IMS Lab, CNRS, UMR 5218, F-33405 Talence, France;
SiGe:C HBT; Safe Operating Area (SOA); Electrical stress; Hot carriers; Compact model; Verilog A; Aging law;
机译:SiGe HBT中的随机电报噪声:可靠性分析接近SOA极限
机译:接近SOA极限的应力条件下SiGe HBT的微观热载流子降解模型
机译:高速SiGeC HBT的物理和电气性能极限-第I部分:垂直缩放
机译:靠近SOA边缘的多指SiGe HBT的物理,小信号和脉冲热阻抗表征
机译:使用SiGe HBT BiCMOS技术的高速串行电路。
机译:SiGe HBT局部应力过程中Au / Pt / Ti-Si3N4界面缺陷和反应的STEM纳米分析
机译:具有底部收集器和单金属层结构的SiGe HBT的电气性能