Temperature, humidity, and bias acceleration model for a GaAs pHEMT process

摘要

This paper investigates the moisture failure acceleration factors for a GaAs pHEMT process. The activation energy Ea and the moisture accelerating factor n were extracted and were shown to be different from those previously reported for Si devices and for another GaAs pHEMT process. The impact of bias was studied and a humidity-induced semiconductor failure model, incorporating bias acceleration, was proposed. (C) 2015 Elsevier Ltd. All rights reserved.