机译:高功率微波诱导的AlGaAs / InGaAs pHEMT中的降解和破坏效应分析
Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China;
Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China;
Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China;
Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China;
Xidian Univ, Sch Microelect, Minist Educ Wide Band Gap Semicond Mat & Devices, Key Lab, Xian 710071, Peoples R China;
pHEMT; High power microwave; Degradation; Damage;
机译:用于开关电路应用的微波功率AlGaAs / InGaAs pHEMT的对称模型
机译:通过干法刻蚀单栅极凹槽制造的高效微波功率AlGaAs / InGaAs PHEMT
机译:适用于微波功率应用的双栅极E / E和E / D模式AlGaAs / InGaAs pHEMT
机译:用于ALGAAS / INGAAS PHEMT器件的THB诱导降解的加速因子
机译:高功率拟晶AlGaAs / InGaAs高电子迁移率晶体管的材料,物理学,器件物理学和技术。
机译:使用液相沉积的TiO2作为栅介质的AlGaAs / InGaAs PHEMT的亚阈值特性和闪烁噪声降低
机译:高功率微波辐射下Algaas / IngaAs PhEMT非线性反应机制