Anomaly detection for IGBTs using Mahalanobis distance

摘要

In this study, a Mahalanobis distance (MD)-based anomaly detection approach has been evaluated for non-punch through (NPT) and trench field stop (FS) insulated gate bipolar transistors (IGBTs). The IGBTs were subjected to electrical-thermal stress under a resistive load until their failure. Monitored on-state collector-emitter voltage and collector-emitter currents were used as input parameters to calculate MD. The MD values obtained from the healthy data were transformed using a Box-Cox transform, and three standard deviation limits were obtained from the transformed data. The upper three standard deviation limits of the transformed MD healthy data were used as a threshold for anomaly detection. The anomaly detection times obtained by using the MD approach were compared to the detection times obtained by using a fixed percentage change threshold for the on-state collector-emitter voltage. (C) 2015 Elsevier Ltd. All rights reserved.