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Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

机译:具有三氧化钨电极的锂离子电池的充放电性能的提高

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摘要

Although a large amount of research on Li ion transportation has been carried out with the aim of improving the properties of lithium ion batteries, there has been little detailed research on electron conduction. Hence, we have been focusing on improving the charge/discharge performance of lithium ion batteries by increasing the electron conductivity of the electrodes. The electron conductivity of crystalline tungsten trioxide (WO_3) was found to be increased by N_2 annealing owing to the generation of oxygen vacancies. It was clarified that increasing the conductivity of the electrodes can improve the performance of lithium ion batteries, particularly their charge/discharge speed and reversibility. Additionally, the best performance was observed in a sample subjected to high-temperature annealing at 700 ℃ in N_2 ambient, which decreased the resistivity of the WO_3 electrode by five orders of magnitude and simultaneously changed the monoclinic crystalline structure into a cubiclike structure into which Li ions are more easily intercalated. Therefore, to enhance the charge/discharge performance of lithium ion batteries, electron conduction should be a focus of research. Crystalline WO_3 was also demonstrated to be a promising material for electrodes since oxygen vacancy generation can be induced by a simple annealing treatment, improving the electron conduction and Li ion transportation.
机译:尽管为了改善锂离子电池的性能已经进行了大量关于锂离子传输的研究,但是关于电子传导的详细研究很少。因此,我们一直致力于通过增加电极的电子电导率来改善锂离子电池的充电/放电性能。发现由于氧空位的产生,通过N_2退火增加了结晶三氧化钨(WO_3)的电子电导率。明确了增加电极的电导率可以改善锂离子电池的性能,特别是其充电/放电速度和可逆性。此外,在N_2气氛中于700℃进行高温退火的样品中观察到最佳性能,这将WO_3电极的电阻率降低了五个数量级,同时将单斜晶晶体结构变成了锂的立方结构。离子更容易嵌入。因此,为了提高锂离子电池的充放电性能,电子传导应成为研究的重点。 WO_3晶体也被证明是电极的有前途的材料,因为可以通过简单的退火处理诱导氧空位的产生,从而改善电子传导和Li离子的传输。

著录项

  • 来源
    《Microelectronics & Reliability 》 |2015年第2期| 402-406| 共5页
  • 作者单位

    Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

    Toshiba Material Co., LTD, 8, Shinsugita-Cho, Isogo-Ku, Yokohama 235-8522, Japan;

    Toshiba Material Co., LTD, 8, Shinsugita-Cho, Isogo-Ku, Yokohama 235-8522, Japan;

    Toshiba Material Co., LTD, 8, Shinsugita-Cho, Isogo-Ku, Yokohama 235-8522, Japan;

    Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

    Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

    Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

    Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

    Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

    Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

    Frontier Research Center, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

    Department of Electronics and Applied Physics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan,Frontier Research Center, Tokyo Institute of Technology, 4259-S2-20 Nagatsuta-cho, Midori-ku, Yokohama, Kanagawa 226-8502, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Tungsten trioxide electrode; Charge/discharge performance; Electron conduction; Crystalline structure;

    机译:三氧化钨电极充放电性能;电子传导;晶体结构;

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