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Impact of geometry on stretchable meandered interconnect uniaxial tensile extension fatigue reliability

机译:几何形状对可弯曲曲折互连单轴拉伸延伸疲劳可靠性的影响

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摘要

This work investigates the impact of geometry on the reliability of a high conductivity, meandered, stretchable interconnect. Meandered copper conductor interconnects of varying geometries that have been encapsulated into a PDMS matrix, are evaluated for reliability under tensile stretching conditions to 10% elongation. We present results that support our earlier findings by experiment and FEM simulation. Following, we vary interconnect parameters related to the encapsulation geometry, such as encapsulation hardness, thickness and stretchable zone perimeter, to assess impact on fatigue life of the embedded meandered copper lines. Results confirm and refine the prior simulation findings. Combinations of interconnect geometry parameters critical for stretching reliability are identified. Among others, we find that the meander radius (R) and encapsulation thickness are strongly coupled, causing very large meanders with thick encapsulation to fail very early. We show that, depending on the design of the meander transition, the characteristic life of an interconnect can differ 50 times under moderate, 10% cyclic elongation. Finally, we indicate the significance of our findings for the design of reliable, stretchable electronic systems.
机译:这项工作研究了几何形状对高导电率,曲折,可拉伸互连的可靠性的影响。已经评估了已封装到PDMS矩阵中的各种几何形状的曲折铜导体互连,在拉伸至10%伸长率条件下的可靠性。我们提供的结果通过实验和有限元模拟来支持我们的早期发现。接下来,我们更改与封装几何形状相关的互连参数,例如封装硬度,厚度和可拉伸区域周长,以评估对嵌入式曲折铜线疲劳寿命的影响。结果证实并完善了先前的模拟结果。确定了对于拉伸可靠性至关重要的互连几何参数的组合。其中,我们发现曲折半径(R)和封装厚度紧密相关,导致具有厚封装的非常大的曲折很早就失效。我们表明,根据弯曲过渡的设计,在中等的10%循环伸长率下,互连的特征寿命可以相差50倍。最后,我们指出了我们的发现对设计可靠,可扩展的电子系统的重要性。

著录项

  • 来源
    《Microelectronics & Reliability》 |2015年第1期|143-154|共12页
  • 作者单位

    Center for Microsystems Technology (CMST), Imec and Ghent University, Technology Park 914, B-9052 Gent-Zwijnaarde, Belgium;

    LaBS, CMIC, Politecnico di Milano, Milan, Italy;

    Center for Microsystems Technology (CMST), Imec and Ghent University, Technology Park 914, B-9052 Gent-Zwijnaarde, Belgium;

    Center for Microsystems Technology (CMST), Imec and Ghent University, Technology Park 914, B-9052 Gent-Zwijnaarde, Belgium;

    Center for Microsystems Technology (CMST), Imec and Ghent University, Technology Park 914, B-9052 Gent-Zwijnaarde, Belgium;

    Philips Research, Philips Group Innovation, High Tech Campus 34/6.038, 5656AE Eindhoven, The Netherlands;

    LaBS, CMIC, Politecnico di Milano, Milan, Italy,IRCCS, Istituto Ortopedico Galeazzi, Milano, Italy;

    Imec, Kapeldreef 75, 3001 Leuven, Belgium;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    SMI; Stretchable interconnect; High conductivity; Meandered interconnect; FEM; Weibull analysis;

    机译:SMI;可伸缩的互连;高导电性弯曲的互连;有限元威布尔分析;

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