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Study of total ionizing dose induced read bit errors in magneto-resistive random access memory

机译:研究总电离剂量引起的磁阻随机存取存储器中的读取位错误

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摘要

This paper presents the Co-60 irradiation results for a 16 Mb Magneto-resistive Random Access Memory (MRAM). Read bit errors were observed during Total Ionizing Dose (TID) testing. We have investigated their physical mechanisms and proposed a resistance drift model of the access transistor in nut (a magnetic tunnel junction and a transistor) storage structure to understand the phenomenon. Read operations have been simulated by HSPICE simulator with the magnetic tunnel junction (MTJ) compact model. The simulation results reveal that the resistance shift of access transistors has a great impact on read bit errors in MRAM. The experimental data and analysis in this work can be used to harden MRAM designs targeting space-borne applications. (C) 2016 Elsevier Ltd. All rights reserved.
机译:本文介绍了16 Mb磁阻随机存取存储器(MRAM)的Co-60照射结果。在总电离剂量(TID)测试期间观察到读取位错误。我们已经研究了它们的物理机制,并提出了在螺母(磁性隧道结和晶体管)存储结构中的访问晶体管的电阻漂移模型以了解这种现象。 HSPICE模拟器已使用磁隧道结(MTJ)紧凑模型对读取操作进行了模拟。仿真结果表明,存取晶体管的电阻偏移对MRAM中的读取位错误有很大影响。这项工作中的实验数据和分析可用于强化针对星载应用的MRAM设计。 (C)2016 Elsevier Ltd.保留所有权利。

著录项

  • 来源
    《Microelectronics & Reliability》 |2016年第12期|104-110|共7页
  • 作者单位

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Jiangsu Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Jiangsu Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China;

    HoHai Univ, Sch Internet Things Engn, Changzhou, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Jiangsu Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Jiangsu Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Jiangsu Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China;

    Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China|Jiangsu Synerget Innovat Ctr Adv Mat SICAM, Nanjing 210009, Jiangsu, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MRAM; Total ionizing dose effects; Read bit errors; SPICE model; Radiation-harden;

    机译:MRAM;总电离剂量效应;读取位错误;SPICE模型;辐射硬化;

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