Advanced thermal simulation of SiGe:C HBTs including back-end-of-line

摘要

Advanced 3-D thermal simulations of state-of-the-art SiGe: C HBTs are performed, which ensure improved accuracy with respect to conventional approaches. The whole back-end-of-line architecture is modeled so as to account for the cooling effect due to the upward heat flow. Moreover, a nonuniform power density is considered to describe the heat source, and thermal conductivity degradation effects due to germanium, doping profile, and phonon scattering in narrow layers are implemented. The numerical thermal resistances are compared with those experimentally evaluated by means of a robust technique relying on the temperature dependence of the base-emitter voltage. (C) 2016 Elsevier Ltd. All rights reserved.