机译:烧结纳米银互连的平面高温功率模块封装的热特性
Virginia Tech, Dept Mat Sci & Engn, Blacksburg, VA 24073 USA;
Mentor Graph Mech Anal Div Fremont, Fremont, CA 94538 USA;
Mentor Graph Mech Anal Div Fremont, Fremont, CA 94538 USA;
Virginia Tech, Dept Mat Sci & Engn, Blacksburg, VA 24073 USA;
Virginia Tech, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24060 USA;
Virginia Tech, Dept Mat Sci & Engn, Blacksburg, VA 24073 USA|Virginia Tech, Bradley Dept Elect & Comp Engn, Blacksburg, VA 24060 USA;
Electric vehicles; Double-side cooled power module; Low-temperature sintering; Nanosilver paste; Structure function; Low thermal resistance; Thermal simulation; Transient dual interface method;
机译:纳米银膏无压烧结平面多芯片半桥功率模块的设计与表征
机译:低温烧结纳米银附着的IGBT功率模块的瞬态热性能
机译:功率电子封装低温快速烧结纳米银接头的表征
机译:具有烧结纳米银互连的平面高温功率模块封装的热特性
机译:电力电子模块的设备焊料互连和模块连接的处理和表征。
机译:贴装功率芯片的快速烧结纳米银接头的特性
机译:烧结压力对纳米双侧烧结电力模块致密化和力学性能的影响