Temperature-dependent resistive switching characteristics for Au/n-type CuAlOx/heavily doped p-type Si devices

摘要

Bipolar switching phenomenon is found for Au/n-type CuAlOx/heavily doped p-type Si devices at temperatures above 220 K. For high or low resistive states (HRS or LRS), the electrical resistance is decreased with increasing temperature, indicating a semiconducting behavior. Carrier transport at LRS or HRS is dominated by hopping conduction. It is reasonable to conclude that the transition from HRS to LAS due to the migration of oxygen vacancies (V-o) is associated with electron hopping mediated through the V-o trap sites. The disappearance of the resistive switching behavior below 220 K is attributed to the immobile V-o traps. The deep understanding of conduction mechanism could help to control the device performance. (C) 2016 Elsevier Ltd. All rights reserved.