机译:W / Ta2O5 / W MIM电容器的漏电流特性随底部W电极厚度的变化
Zhejiang Univ, Dept Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310027, Zhejiang, Peoples R China;
Zhejiang Univ, Dept Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310027, Zhejiang, Peoples R China;
Zhejiang Univ, Dept Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310027, Zhejiang, Peoples R China;
Zhejiang Univ, Dept Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310027, Zhejiang, Peoples R China;
Zhejiang Univ, Dept Informat Sci & Elect Engn, 38 Zheda Rd, Hangzhou 310027, Zhejiang, Peoples R China;
Nanyang Technol Univ, Sch Elect & Elect Engn, Microelect Ctr, Nanyang Ave, Singapore 639798, Singapore;
Ta2O5; Surface roughness; Surface smoothing; Effective Schottky barrier height;
机译:以RuO_2膜为底电极改善金属-绝缘-金属电容器的漏电流特性
机译:金属栅极对Ta2O5叠层电容器击穿特性和漏电流的影响
机译:通过使用TiLaO介电层和Ir电极改善高密度MIM电容器中的高温泄漏
机译:Ta2O5 MIM和MIS电容器中的漏电流随时间变化
机译:在时序分析,漏电流分析和延迟故障诊断中确定性的模内变化建模。
机译:以石墨烯为底电极的超薄型透明柔性电容器
机译:锡/ HFO2 / TIN MIM电容器中的漏电流和由于电应力引起的降解
机译:由亚微米I.C过程中的氧化物厚度变化引起的电容器不匹配