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Impact of NBTI induced variations on delay locked loop multi-phase clock generator

机译:NBTI引起的变化对延迟锁定环多相时钟发生器的影响

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Negative bias temperature instability (NBTI) is a serious reliability concern for both analog and digital CMOS VLSI circuits. The shift in threshold voltage and reduction in drain current due to NBTI in p-channel MOSFETs are time, bias and temperature dependent. The degradation of the PMOS at any critical nodes in the circuit leads to the failure of the circuit immediately or in few months/year. The Delay-Locked-Loop (DLL) which is used as multi-phase clock generator for microprocessors, frequency synthesizers, time-to-digital converter (TDC) etc. reduces the phase error between output and reference clock until it is locked. The delay variations due to process, voltage and temperature fluctuations are governed by its feedback system. At start-up, the phase shift of the output clock should lie between 0.5 and 1.5 times the time period of the reference clock to achieve regular locking. The deviations from the above criteria due to NBTI degradation directly affect the control system and lead to erroneous locking. The NBTI-induced time-dependent variation in PMOS of the delay stage in voltage-controlled delay line (VCDL) of DLL affects the delay in each stage of VCDL and propagates as phase error to the output clock. This paper analyzes the impact of NBTI-induced time-dependent variations in Delay-Locked-Loop (DLL) based clock generators for the first time. The DLL is designed with 180 nm technologies with working frequency range from 75 MHz to 220 MHz. The time dependent variations in VCDL, the most sensitive blocks of DLL, are analyzed. It is observed that these time-dependent variations increase the phase error and the working of DLL is severely affected at the rearmost end of frequency range. The output clock gets deviated and observed to be locked late after pi/2 or pi radians from the nominal lock. It is essential to prevent DLL locking to an incorrect delay or false lock and to bring the output clock back to the correct position. An adaptive body bias circuit is proposed in this paper to reduce the impact of NBTI degradation and thereby to prevent erroneous locking in DLL. (C) 2016 Elsevier Ltd. All rights reserved.
机译:对于模拟和数字CMOS VLSI电路,负偏置温度不稳定性(NBTI)都是严重的可靠性问题。 p沟道MOSFET中由于NBTI引起的阈值电压偏移和漏极电流减小与时间,偏置和温度有关。 PMOS在电路中任何关键节点处的退化都会立即或在数月/年内导致电路故障。延迟锁定环路(DLL)用作微处理器,频率合成器,时间数字转换器(TDC)等的多相时钟发生器,可减小输出时钟与参考时钟之间的相位误差,直到锁定为止。由于过程,电压和温度波动引起的延迟变化由其反馈系统控制。在启动时,输出时钟的相移应在参考时钟时间周期的0.5到1.5倍之间,以实现常规锁定。由于NBTI降级而导致的与上述标准的偏差直接影响控制系统并导致错误的锁定。 NBTI引起的DLL压控延迟线(VCDL)中延迟级的PMOS随时间的变化会影响VCDL每一级的延迟,并作为相位误差传播到输出时钟。本文首次分析了基于NBTI的时延变化对基于延迟锁定环(DLL)的时钟发生器的影响。 DLL是使用180 nm技术设计的,工作频率范围为75 MHz至220 MHz。分析了VCDL(DLL的最敏感块)中随时间变化的情况。可以看出,这些与时间有关的变化会增加相位误差,并且在频率范围的最后端会严重影响DLL的工作。在标称锁定的pi / 2或pi弧度之后,输出时钟会出现偏差并被锁定。必须防止DLL锁定到不正确的延迟或错误锁定,并使输出时钟回到正确的位置。本文提出了一种自适应体偏置电路,以减少NBTI降级的影响,从而防止DLL中的错误锁定。 (C)2016 Elsevier Ltd.保留所有权利。

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