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机译:通过多步骤Si +注入来硬化绝缘体上硅nMOSFET
Jimei Univ, Coll Informat Engn, Xiamen 361021, Fujian, Peoples R China;
Jimei Univ, Coll Informat Engn, Xiamen 361021, Fujian, Peoples R China;
Jimei Univ, Coll Informat Engn, Xiamen 361021, Fujian, Peoples R China;
Jimei Univ, Coll Informat Engn, Xiamen 361021, Fujian, Peoples R China;
Jimei Univ, Coll Informat Engn, Xiamen 361021, Fujian, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China;
Total dose radiation; Silicon-on-insulator; Ion implantation; X-ray Diffraction; Radiation hardening by process;
机译:离子注入掩埋氧化物中H栅极PD NMOSFET / SIMOX的总剂量强化研究
机译:Si +注入然后等离子氢化和H +注入结晶硅中结构缺陷形成的比较分析
机译:适用于5G时代的大规模应变式绝缘硅技术:几何形状和退火对nMOSFET的应变保持率和器件性能的影响
机译:通过在氧化之前将氮注入硅中而形成的氮氧化硅栅极nMOSFET的质子辐射硬化
机译:超薄氧注入绝缘体上硅材料的微观结构和加工条件的相关性。
机译:狭窄的种植牙的疲劳:硬化方法的影响
机译:完全耗尽的UTBOX绝缘体上硅nMOSFET的低频噪声研究的经验教训
机译:退火条件对si +和mg +注入211 GaN掺杂抗旋转性能的影响