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Effect of 805 nm on reliability of 735/805/850-nm LED involved near-infrared spectroscopy biomedical device

机译:805 nm对涉及近红外光谱生物医学设备的735/805/850 nm LED可靠性的影响

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摘要

Near-infrared spectroscopy (NIRS) has been widely used in biomedicine due to its capability of noninvasively detecting hemodynamic variations in relative deep tissue. Most NIRS devices utilized multiple-wavelengths integrated LED as the sources, of which the 735/805/850-nm LED was mostly employed. As we known, the 735/850-nm combination is enough for quantifying the changes of oxy-hemoglobin (Delta HbO(2)) and deoxy-hemoglobin (Delta Hb). Then how is the effect of the wavelength 805-nm of 735/805/850-nm LED on the measurement reliability? Here we performed blood model experiments with 57 human blood samples and recorded optical density variations at above 3 wavelengths. Both of the least squares method and multi-variable linear regression analysis were used to quantify Delta HbO(2) and AHb with three-wavelength combination (735/805/850-nm) and two-wavelength combination (735/850-nm) respectively. By comparing the quantified values with the real values, we found that the results obtained from 735/850-nm combination are more close to reality than the 735/805/850-nm combination. This study reported, for the first time, that 805 nm actually took a negative effect on measurement reliability of NIRS. It indicates to get rid of 805 nm from such LED design to reduce the LED cost and get higher reliability for NIRS instrumentation. (C) 2017 Elsevier Ltd. All rights reserved.
机译:由于近红外光谱(NIRS)具有无创检测相对深层组织中血液动力学变化的能力,因此已广泛用于生物医学。大多数NIRS设备都使用多波长集成LED作为光源,其中大多数采用735/805/850 nm LED。众所周知,735/850 nm的组合足以量化氧合血红蛋白(Delta HbO(2))和脱氧血红蛋白(Delta Hb)的变化。那么735/805 / 850-nm LED的805-nm波长对测量可靠性有何影响?在这里,我们对57个人体血液样本进行了血液模型实验,并记录了上述3个波长的光密度变化。最小二乘法和多变量线性回归分析均用于量化具有三个波长组合(735/805 / 850-nm)和两个波长组合(735 / 850-nm)的Delta HbO(2)和AHb分别。通过将定量值与实际值进行比较,我们发现从735 / 850-nm组合中获得的结果比735/805 / 850-nm组合中的结果更接近实际。该研究首次报道805 nm实际上对NIRS的测量可靠性产生了负面影响。这表明从这种LED设计中去除805 nm可以降低LED成本并为NIRS仪器获得更高的可靠性。 (C)2017 Elsevier Ltd.保留所有权利。

著录项

  • 来源
    《Microelectronics & Reliability》 |2017年第11期|406-410|共5页
  • 作者单位

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China;

    Politecn Milan, Dept Phys, I-20133 Milan, Italy;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China;

    Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China;

    Chinese Acad Med Sci, Inst Biomed Engn, Tianjin 300192, Peoples R China|Peking Union Med Coll, Tianjin 300192, Peoples R China|Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Multiple-wavelengths; Integrated LED; Near-infrared spectroscopy (NIRS); Wavelength; Measurement reliability;

    机译:多波长;集成LED;近红外光谱(NIRS);波长;测量可靠性;
  • 入库时间 2022-08-18 01:25:39

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