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Circuit simulation assisting Physical Fault Isolation for effective root cause analysis

机译:电路仿真辅助物理故障隔离,可进行有效的根本原因分析

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In this study, the PH (Physical Fault Isolation) was assisted with the analog circuit simulation to provide insight into the device performance under the failed condition and the failure mechanisms. This approach allows us to choose and apply the right PH technique to find the failure root cause in a very time effective manner and propose the failure mode hypothesis. Accordingly, as an alternative to the conventional circuit modification approaches a backside PIS (Photoelectric Laser Stimulation) based technique was applied to the suspicious analog block. In this technique, a laser with the wavelength in the NIR (Near Infrared) range stimulates the analog circuit block at the transistor level and changes the device electrical state from fail to pass. Consequently, we could evaluate the circuit behaviour at failed condition and verify the failure. In this manner, the competent combination of PFI and analog circuit simulation successfully leads us to the corrective action to improve the circuit design and overcome the inevitable fabrication process variation. (C) 2017 Elsevier Ltd. All rights reserved.
机译:在这项研究中,PH(物理故障隔离)通过模拟电路仿真得到辅助,以深入了解故障条件下的设备性能和故障机制。这种方法使我们能够选择并应用正确的PH技术,以非常及时的方式找到故障的根本原因,并提出故障模式假设。因此,作为常规电路修改的替代方案,将基于背面PIS(光电激光刺激)的技术应用于可疑模拟模块。在这种技术中,波长在NIR(近红外)范围内的激光器会在晶体管级刺激模拟电路模块,并使器件的电状态从失败通过。因此,我们可以评估故障条件下的电路行为并验证故障。通过这种方式,PFI和模拟电路仿真的有效结合成功地将我们引向纠正措施,以改善电路设计并克服不可避免的制造工艺变化。 (C)2017 Elsevier Ltd.保留所有权利。

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