Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level

摘要

Within this paper we investigate the degradation of GaN-HEMTs with p-GaN gate submitted to stress at forward gate bias. We studied the effect of both constant-voltage stress and short-pulse stress (induced by TLP, Transmission Line Pulser); devices having three different Mg-doping levels (ranging from 2.1 . 10(19)/cm(3) to 2.9 . 1019/cm(3)) were used for the study.