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Innovative conception of SiC MOSFET-Schottky 3D power inverter module with double side cooling and stacking using silver sintering

机译:具有银冷却的双面冷却和堆叠的SiC MOSFET-肖特基3D功率逆变器模块的创新概念

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摘要

In this paper, authors developed an innovative packaging for a power inverter SiC MOSFET-Schottky. The design, composed by 6 SiC-MOSFET and 6 SiC-Schottky diodes, places dice between 2 direct-bonding-copper substrates, it was optimized to equilibrate thermal repartition on the two DBC surfaces. We purpose to increase thermal dissipation of power modules by the use of two water-cooling blocks disposed on top and on the bottom of our power inverter; it permits to use both sides of power module to dissipate heat flux. According to Finite Element Method simulations performed with ANSYS (R), double side cooling permits to enhance by up to two times thermal dissipation. Moreover solders are replaced by silver sintering and wire-bonds are suppressed by top substrate connections. We want to highlight that those improvements participates to increase reliability of power modules. (C) 2017 Elsevier Ltd. All rights reserved.
机译:在本文中,作者开发了一种用于功率逆变器SiC MOSFET-Schottky的创新封装。该设计由6个SiC-MOSFET和6个SiC-肖特基二极管组成,将管芯放置在2个直接键合铜基板之间,并进行了优化以平衡两个DBC表面上的热分配。我们的目的是通过在逆变器的顶部和底部安装两个水冷块来增加功率模块的散热;它允许使用功率模块的两侧来散热。根据用ANSYS(R)执行的有限元方法模拟,双面冷却可将散热量提高两倍。此外,焊料被银烧结所替代,并且引线键合被顶部基板连接所抑制。我们要强调的是,这些改进有助于提高电源模块的可靠性。 (C)2017 Elsevier Ltd.保留所有权利。

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